High-Purity Silicon Wafer For Study 4XP Type (Low Resistance)

Brand: As One
Country of Origin: Japan
2-960-07
- Size (in) x Conductive Type: 4 x P Type (Low Resistance)
- OF Length (mm) x Wafer Thickness (�gm): 32.5 �� 2.5 x 525 �� 25
- Quantity: 1 piece
- Manufacturing Method: CZ Method
- Surface Orientation: 100
- OF Position: 110
- Resistance Value: ? 0.02 �[ �P cm
- Particles: No matter what the particle
- For custom-made products
- (1) Orientation (cutting angle), OF Position Angle Tolerance and thickness Tolerance can be processed to a smaller size and higher accuracy, enabling accurate groove formation during etching.
- (2) Various shape processing and surface treatment are possible (Examples: roughened, drilled, and oxidized wafers).
- (3) It is possible to correspond to the specific resistivity and wafer thickness you desire.
- (4) Please contact us anytime for 8 inch and 12 inch.